IPP80N06S407AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 40μA

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

60V

Drain Current-Max (Abs) (ID) :

80A

Rds On (Max) @ Id, Vgs :

7.4m Ω @ 80A, 10V

ECCN Code :

EAR99

Published :

2006

FET Type :

N-Channel

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drain-source On Resistance-Max :

0.0071Ohm

Avalanche Energy Rating (Eas) :

71 mJ

Number of Terminations :

3

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

320A

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Package / Case :

TO-220-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

79W Tc