IPP80N06S405AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 25V

Power Dissipation-Max :

107W Tc

Drain Current-Max (Abs) (ID) :

80A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 80A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

60V

Vgs(th) (Max) @ Id :

4V @ 60μA

Drain-source On Resistance-Max :

0.0057Ohm

Published :

2009

Terminal Position :

Single

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Pulsed Drain Current-Max (IDM) :

320A

Series :

OptiMOS™

Vgs (Max) :

±20V

Package / Case :

TO-220-3

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

152 mJ