IPP80N06S2L11AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

46 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Packaging :

Tube

Terminal Position :

Single

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

32ns

Lead Free :

Contains Lead

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

10.7m Ω @ 40A, 10V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Mount :

Through Hole

Max Dual Supply Voltage :

55V

Radiation Hardening :

No

Fall Time (Typ) :

13 ns

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Factory Lead Time :

14 Weeks

Halogen Free :

Halogen Free

Continuous Drain Current (ID) :

80A

Series :

OptiMOS™

Published :

2010

Avalanche Energy Rating (Eas) :

280 mJ

Input Capacitance (Ciss) (Max) @ Vds :

2075pF @ 25V

Turn On Delay Time :

11 ns

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Power Dissipation-Max :

158W Tc

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

2V @ 93μA

Drain-source On Resistance-Max :

0.0147Ohm

Terminal Finish :

Tin (Sn)

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Number of Terminations :

3