IPP80N06S2L06AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

320A

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Vgs (Max) :

±20V

Published :

2006

Transistor Element Material :

SILICON

Series :

OptiMOS™

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.0081Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

530 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Dual Supply Voltage :

55V

Input Capacitance (Ciss) (Max) @ Vds :

3800pF @ 25V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Position :

Single

Continuous Drain Current (ID) :

80A

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 69A, 10V

Mounting Type :

Through Hole

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 180μA

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

250W Tc

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

RoHS Status :

RoHS Compliant