IPP80N06S2L-06

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 69A, 10V

Package / Case :

TO-220-3

Avalanche Energy Rating (Eas) :

530 mJ

Drain-source On Resistance-Max :

0.0081Ohm

Additional Feature :

LOGIC LEVEL COMPATIBLE

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

320A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2V @ 180μA

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Number of Elements :

1

Published :

2006

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

3800pF @ 25V

Continuous Drain Current (ID) :

80A

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Mounting Type :

Through Hole

Series :

OptiMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Number of Terminations :

3

Terminal Position :

Single

Power Dissipation-Max :

250W Tc

Max Dual Supply Voltage :

55V