IPP80N06S2H5AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 230μA

Mount :

Through Hole

Max Dual Supply Voltage :

55V

Published :

2006

Drain to Source Breakdown Voltage :

55V

Series :

OptiMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0055Ohm

Lead Free :

Contains Lead

Continuous Drain Current (ID) :

80A

Terminal Finish :

Tin (Sn)

Length :

10mm

Pbfree Code :

yes

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

Power Dissipation-Max :

300W Tc

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Fall Time (Typ) :

22 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

14 Weeks

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Mounting Type :

Through Hole

Number of Elements :

1

Turn-Off Delay Time :

48 ns

Height :

15.65mm

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Power Dissipation :

300W

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Width :

4.4mm

Element Configuration :

Single

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 80A, 10V

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Rise Time :

23ns

JESD-609 Code :

e3

Turn On Delay Time :

23 ns

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

700 mJ