IPP80N06S208AKSA2
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- Mfr.Part #
- IPP80N06S208AKSA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 80A TO220-3
- Stock
- 27,811
- In Stock ：
- 27,811
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 80A
- Package / Case :
- TO-220-3
- Published :
- 2006
- JEDEC-95 Code :
- TO-220AB
- Drain to Source Breakdown Voltage :
- 55V
- Voltage :
- 55V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 14 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 96nC @ 10V
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Max Dual Supply Voltage :
- 55V
- Number of Elements :
- 1
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 58A, 10V
- Halogen Free :
- Halogen Free
- Turn-Off Delay Time :
- 32 ns
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 14 ns
- Factory Lead Time :
- 16 Weeks
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Current :
- 80A
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 450 mJ
- Power Dissipation-Max :
- 215W Tc
- Power Dissipation :
- 215W
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- OptiMOS™
- Drain-source On Resistance-Max :
- 0.008Ohm
- Rise Time :
- 15ns
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 2860pF @ 25V
- Datasheets
- IPP80N06S208AKSA2
N-Channel Tube 8m Ω @ 58A, 10V ±20V 2860pF @ 25V 96nC @ 10V TO-220-3
IPP80N06S208AKSA2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 450 mJ.A device's maximum input capacitance is 2860pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 55V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
IPP80N06S208AKSA2 Features
the avalanche energy rating (Eas) is 450 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 32 ns
IPP80N06S208AKSA2 Applications
There are a lot of Infineon Technologies
IPP80N06S208AKSA2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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