IPP80N06S207AKSA4

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

10 Weeks

Drain Current-Max (Abs) (ID) :

80A

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Power Dissipation-Max :

250W Tc

Vgs(th) (Max) @ Id :

4V @ 180μA

Input Capacitance (Ciss) (Max) @ Vds :

3400pF @ 25V

DS Breakdown Voltage-Min :

55V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Pulsed Drain Current-Max (IDM) :

320A

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Mounting Type :

Through Hole

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 68A, 10V

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Packaging :

Tube

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

OptiMOS™

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

530 mJ

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

55V

Drain-source On Resistance-Max :

0.0066Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Surface Mount :

No