IPP80N04S404AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 35μA

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Turn On Delay Time :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

3440pF @ 25V

Packaging :

Tube

Drain-source On Resistance-Max :

0.0046Ohm

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Lead Free :

Contains Lead

Number of Pins :

3

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 80A, 10V

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

80A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Dual Supply Voltage :

40V

Halogen Free :

Halogen Free

Transistor Element Material :

SILICON

Turn-Off Delay Time :

9 ns

Power Dissipation-Max :

71W Tc

Rise Time :

12ns

Published :

2010

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Series :

OptiMOS™

Avalanche Energy Rating (Eas) :

100 mJ

RoHS Status :

ROHS3 Compliant

Number of Elements :

1