IPP77N06S212AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Series :

OptiMOS™

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

10 Weeks

Rds On (Max) @ Id, Vgs :

12m Ω @ 38A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

158W Tc

Max Dual Supply Voltage :

55V

Halogen Free :

Halogen Free

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Continuous Drain Current (ID) :

77A

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 93µA

Drain-source On Resistance-Max :

0.012Ohm

Pulsed Drain Current-Max (IDM) :

308A

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

280 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Number of Elements :

1

Transistor Element Material :

SILICON

Mount :

Through Hole

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

77A Tc

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes