IPP70P04P409AKSA1
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- Mfr.Part #
- IPP70P04P409AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 72A TO220-3
- Stock
- 11,360
- In Stock ：
- 11,360
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 24 mJ
- JEDEC-95 Code :
- TO-220AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 24 ns
- Terminal Position :
- Single
- Max Dual Supply Voltage :
- -40V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 4810pF @ 25V
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 288A
- Halogen Free :
- Halogen Free
- Current - Continuous Drain (Id) @ 25°C :
- 72A Tc
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Lead Free :
- Contains Lead
- Power Dissipation-Max :
- 75W Tc
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Continuous Drain Current (ID) :
- 72A
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 120µA
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Rise Time :
- 15ns
- Drain-source On Resistance-Max :
- 0.0094Ohm
- Drain to Source Voltage (Vdss) :
- 40V
- Fall Time (Typ) :
- 31 ns
- Transistor Element Material :
- SILICON
- FET Type :
- P-Channel
- Published :
- 2011
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn On Delay Time :
- 19 ns
- Rds On (Max) @ Id, Vgs :
- 9.4m Ω @ 70A, 10V
- Mount :
- Through Hole
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- IPP70P04P409AKSA1
P-Channel Tube 9.4m Ω @ 70A, 10V ±20V 4810pF @ 25V 70nC @ 10V 40V TO-220-3
IPP70P04P409AKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 24 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4810pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 24 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 288A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 19 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by -40V.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPP70P04P409AKSA1 Features
the avalanche energy rating (Eas) is 24 mJ
a continuous drain current (ID) of 72A
the turn-off delay time is 24 ns
based on its rated peak drain current 288A.
a 40V drain to source voltage (Vdss)
IPP70P04P409AKSA1 Applications
There are a lot of Infineon Technologies
IPP70P04P409AKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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