IPP70N10S3L12AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

5550pF @ 25V

Drain to Source Voltage (Vdss) :

100V

ECCN Code :

EAR99

Published :

2012

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

12.1m Ω @ 70A, 10V

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Additional Feature :

LOGIC LEVEL COMPATIBLE

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

2.4V @ 83μA

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

125W Tc

Drain Current-Max (Abs) (ID) :

70A

Packaging :

Tube

Avalanche Energy Rating (Eas) :

154 mJ

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0123Ohm

Number of Elements :

1

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

70A Tc

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Pulsed Drain Current-Max (IDM) :

280A

Package / Case :

TO-220-3