IPP70N04S406AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

72 mJ

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2550pF @ 25V

Mount :

Through Hole

Number of Elements :

1

Factory Lead Time :

16 Weeks

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0065ohm

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 70A, 10V

FET Type :

N-Channel

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Terminal Finish :

Tin (Sn)

Halogen Free :

Halogen Free

Number of Pins :

3

Series :

OptiMOS™

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

280A

Packaging :

Tube

Power Dissipation-Max :

58W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

70A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

9 ns

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Turn On Delay Time :

8 ns

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

7 ns

ECCN Code :

EAR99

Package / Case :

TO-220-3

Max Dual Supply Voltage :

40V

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Vgs(th) (Max) @ Id :

4V @ 26μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Rise Time :

10ns

Lead Free :

Contains Lead

Published :

2010

Transistor Element Material :

SILICON