IPP65R660CFDXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Power Dissipation-Max :

62.5W Tc

Rds On (Max) @ Id, Vgs :

660m Ω @ 2.1A, 10V

Terminal Position :

Single

Number of Elements :

1

Avalanche Energy Rating (Eas) :

115 mJ

Drain-source On Resistance-Max :

0.66Ohm

Pulsed Drain Current-Max (IDM) :

17A

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Surface Mount :

No

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

615pF @ 100V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e3

Published :

2005

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Packaging :

Tube

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

RoHS Status :

RoHS Compliant

Drain Current-Max (Abs) (ID) :

6A

Drain to Source Voltage (Vdss) :

650V

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Series :

CoolMOS™

Qualification Status :

Not Qualified

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4.5V @ 200μA

DS Breakdown Voltage-Min :

650V

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE