IPP60R060P7
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- Mfr.Part #
- IPP60R060P7
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- 600V, 0.06OHM, N-CHANNEL MOSFET,
- Stock
- 31,233
- In Stock ：
- 31,233
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 18 Weeks
- Power Dissipation-Max :
- 164W Tc
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2014
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.06Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Case Connection :
- DRAIN
- Surface Mount :
- No
- Pulsed Drain Current-Max (IDM) :
- 151A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2895pF @ 400V
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- Avalanche Energy Rating (Eas) :
- 159 mJ
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 67nC @ 10V
- FET Type :
- N-Channel
- Series :
- CoolMOS™ P7
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4V @ 800μA
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 15.9A, 10V
- DS Breakdown Voltage-Min :
- 600V
- Drain to Source Voltage (Vdss) :
- 600V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Datasheets
- IPP60R060P7
IPP60R060P7 Documents
N-Channel Tube 60m Ω @ 15.9A, 10V ±20V 2895pF @ 400V 67nC @ 10V 600V TO-220-3
IPP60R060P7XKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 159 mJ.A device's maximum input capacitance is 2895pF @ 400V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its maximum pulsed drain current is 151A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 600V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IPP60R060P7XKSA1 Features
the avalanche energy rating (Eas) is 159 mJ
based on its rated peak drain current 151A.
a 600V drain to source voltage (Vdss)
IPP60R060P7XKSA1 Applications
There are a lot of Infineon Technologies
IPP60R060P7XKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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