IPP60R040C7XKSA1
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- Mfr.Part #
- IPP60R040C7XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 50A TO220-3
- Stock
- 1,098
- In Stock ：
- 1,098
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 18 Weeks
- Pbfree Code :
- yes
- Published :
- 2015
- Vgs (Max) :
- ±20V
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 107nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 4340pF @ 400V
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Avalanche Energy Rating (Eas) :
- 249 mJ
- Max Dual Supply Voltage :
- 600V
- Pulsed Drain Current-Max (IDM) :
- 211A
- Transistor Application :
- SWITCHING
- Series :
- CoolMOS™ C7
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 24.9A, 10V
- Continuous Drain Current (ID) :
- 50A
- JEDEC-95 Code :
- TO-220AB
- Vgs(th) (Max) @ Id :
- 4V @ 1.24mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation-Max :
- 227W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Halogen Free :
- Halogen Free
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.04Ohm
- Datasheets
- IPP60R040C7XKSA1
N-Channel Tube 40m Ω @ 24.9A, 10V ±20V 4340pF @ 400V 107nC @ 10V TO-220-3
IPP60R040C7XKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 249 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4340pF @ 400V.This device conducts a continuous drain current (ID) of 50A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 211A.With 600V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPP60R040C7XKSA1 Features
the avalanche energy rating (Eas) is 249 mJ
a continuous drain current (ID) of 50A
based on its rated peak drain current 211A.
IPP60R040C7XKSA1 Applications
There are a lot of Infineon Technologies
IPP60R040C7XKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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