IPP60R099C7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Pbfree Code :

yes

Factory Lead Time :

18 Weeks

Published :

2008

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Max Dual Supply Voltage :

600V

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Number of Elements :

1

Continuous Drain Current (ID) :

22A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

83A

Drain-source On Resistance-Max :

0.099Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

99m Ω @ 9.7A, 10V

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1819pF @ 400V

Mounting Type :

Through Hole

Halogen Free :

Halogen Free

JESD-30 Code :

R-PSFM-T3

Series :

CoolMOS™ C7

Avalanche Energy Rating (Eas) :

97 mJ

FET Type :

N-Channel

Packaging :

Tube

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 490μA

Number of Terminations :

3

Power Dissipation-Max :

110W Tc