IPP600N25N3GXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Published :

2008

Turn On Delay Time :

10 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Max Dual Supply Voltage :

250V

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.06Ohm

Power Dissipation :

136W

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

60m Ω @ 25A, 10V

Terminal Position :

Single

Halogen Free :

Halogen Free

Turn-Off Delay Time :

22 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

8 ns

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 90µA

Input Capacitance (Ciss) (Max) @ Vds :

2350pF @ 100V

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

13 Weeks

Transistor Element Material :

SILICON

Pbfree Code :

yes

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Series :

OptiMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

136W Tc

Lead Free :

Lead Free

Continuous Drain Current (ID) :

25A