IPP65R660CFDAAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Rise Time :

8ns

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

10.36mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Dual Supply Voltage :

650V

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

6A Tc

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.66Ohm

JESD-609 Code :

e3

Power Dissipation-Max :

62.5W Tc

Vgs (Max) :

±20V

Number of Elements :

1

Continuous Drain Current (ID) :

6A

Vgs(th) (Max) @ Id :

4.5V @ 200μA

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Factory Lead Time :

16 Weeks

Height :

15.95mm

Operating Temperature :

-40°C~150°C TJ

Packaging :

Tube

Element Configuration :

Single

Turn On Delay Time :

9 ns

Rds On (Max) @ Id, Vgs :

660m Ω @ 3.2A, 10V

Turn-Off Delay Time :

40 ns

Drain Current-Max (Abs) (ID) :

6A

Input Capacitance (Ciss) (Max) @ Vds :

543pF @ 100V

Transistor Element Material :

SILICON

Number of Terminations :

3

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

62.5W

Fall Time (Typ) :

10 ns

Pbfree Code :

No

Terminal Finish :

Tin (Sn)

Lead Free :

Contains Lead

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.57mm

Published :

2008

Series :

Automotive, AEC-Q101, CoolMOS™

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE