IPP65R660CFD

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

6A

Max Dual Supply Voltage :

650V

Element Configuration :

Single

Fall Time (Typ) :

10 ns

Turn-Off Delay Time :

40 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Published :

2008

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Vgs(th) (Max) @ Id :

4.5V @ 200μA

Number of Terminations :

3

Factory Lead Time :

16 Weeks

Power Dissipation :

62.5W

Package / Case :

TO-220-3

Drain Current-Max (Abs) (ID) :

6A

Rise Time :

8ns

Input Capacitance (Ciss) (Max) @ Vds :

543pF @ 100V

Turn On Delay Time :

9 ns

Operating Temperature :

-40°C~150°C TJ

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Halogen Free :

Halogen Free

Power Dissipation-Max :

62.5W Tc

Number of Pins :

3

Length :

10.36mm

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.57mm

Lead Free :

Contains Lead

Drain-source On Resistance-Max :

0.66Ohm

JESD-609 Code :

e3

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Series :

Automotive, AEC-Q101, CoolMOS™

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

660m Ω @ 3.2A, 10V

Pbfree Code :

No

Height :

15.95mm