IPP65R600E6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

CoolMOS™

FET Type :

N-Channel

Number of Terminations :

3

Max Dual Supply Voltage :

650V

Pin Count :

3

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.1A, 10V

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Factory Lead Time :

12 Weeks

Number of Elements :

1

Published :

2011

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Power Dissipation :

63W

Power Dissipation-Max :

63W Tc

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Halogen Free :

Halogen Free

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

8ns

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Turn On Delay Time :

10 ns

Drain-source On Resistance-Max :

0.6Ohm

Turn-Off Delay Time :

64 ns

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

11 ns

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Continuous Drain Current (ID) :

7.3A

Vgs(th) (Max) @ Id :

3.5V @ 210µA

Transistor Element Material :

SILICON

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant