IPP65R600E6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Series :

CoolMOS™

Vgs(th) (Max) @ Id :

3.5V @ 210µA

FET Type :

N-Channel

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.1A, 10V

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

Rise Time :

8ns

Fall Time (Typ) :

11 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

64 ns

Power Dissipation :

63W

Mount :

Through Hole

Published :

2011

Pin Count :

3

Vgs (Max) :

±20V

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

7.3A

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Mounting Type :

Through Hole

Power Dissipation-Max :

63W Tc

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Package / Case :

TO-220-3

Number of Terminations :

3

Drain-source On Resistance-Max :

0.6Ohm

Turn On Delay Time :

10 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Max Dual Supply Voltage :

650V

Halogen Free :

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

RoHS Status :

RoHS Compliant

Packaging :

Tube