IPP65R380E6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

PG-TO220-3-1

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

FET Type :

N-Channel

Series :

CoolMOS™

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

710 pF @ 100 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C ~ 150°C (TJ)

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Terminal Form :

THROUGH-HOLE

Pulsed Drain Current-Max (IDM) :

29 A

Avalanche Energy Rating (Eas) :

215 mJ

Drain Current-Max (Abs) (ID) :

10.6 A

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.38 Ω

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

380mOhm @ 3.2A, 10V

Package Shape :

RECTANGULAR

Product Status :

Active

Number of Terminals :

3

Drain to Source Voltage (Vdss) :

650 V

Transistor Element Material :

SILICON

Factory Lead Time :

1 Week

Power Dissipation (Max) :

83W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

39 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

10.6A (Tc)

Vgs(th) (Max) @ Id :

3.5V @ 320µA

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On, Min Rds On) :

10V

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Pbfree Code :

yes

DS Breakdown Voltage-Min :

650 V

Power Dissipation-Max (Abs) :

83 W

FET Feature :

-

Technology :

MOSFET (Metal Oxide)

Package :

Bulk

Terminal Position :

Single

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Vgs (Max) :

±20V