IPP65R310CFDAAKSA1
- Mfr.Part #
- IPP65R310CFDAAKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 11.4A TO220-3
- Stock
- 17,438
- In Stock :
- 17,438
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -40°C~150°C TJ
- Published :
- 2008
- Factory Lead Time :
- 16 Weeks
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Turn On Delay Time :
- 11 ns
- Continuous Drain Current (ID) :
- 11.4A
- Number of Elements :
- 1
- Reach Compliance Code :
- not_compliant
- Lead Free :
- Contains Lead
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1110pF @ 100V
- Max Dual Supply Voltage :
- 650V
- Vgs(th) (Max) @ Id :
- 4.5V @ 440μA
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Pbfree Code :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JEDEC-95 Code :
- TO-220AB
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- Automotive, AEC-Q101, CoolMOS™
- Current - Continuous Drain (Id) @ 25°C :
- 11.4A Tc
- Power Dissipation-Max :
- 104.2W Tc
- Number of Pins :
- 3
- Fall Time (Typ) :
- 7 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Halogen Free :
- Halogen Free
- Rise Time :
- 7.5ns
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 310m Ω @ 4.4A, 10V
- Turn-Off Delay Time :
- 45 ns
- Additional Feature :
- High Reliability
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Datasheets
- IPP65R310CFDAAKSA1

N-Channel Tube 310m Ω @ 4.4A, 10V ±20V 1110pF @ 100V 41nC @ 10V TO-220-3
IPP65R310CFDAAKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 290 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1110pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 11 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 650V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPP65R310CFDAAKSA1 Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 11.4A
the turn-off delay time is 45 ns
IPP65R310CFDAAKSA1 Applications
There are a lot of Infineon Technologies
IPP65R310CFDAAKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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