IPP65R280E6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

76 ns

Vgs (Max) :

±20V

FET Type :

N-Channel

Package / Case :

TO-220-3

Factory Lead Time :

14 Weeks

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Mount :

Through Hole

Number of Pins :

3

Turn On Delay Time :

11 ns

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 100V

Qualification Status :

Not Qualified

Power Dissipation-Max :

104W Tc

Avalanche Energy Rating (Eas) :

290 mJ

Lead Free :

Lead Free

Continuous Drain Current (ID) :

13.8A

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3.5V @ 440µA

Rise Time :

9ns

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

13.8A Tc

Pbfree Code :

yes

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.28Ohm

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

CoolMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Number of Elements :

1

Published :

2008

Max Dual Supply Voltage :

650V

Rds On (Max) @ Id, Vgs :

280m Ω @ 4.4A, 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Halogen Free :

Halogen Free

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

20V