IPP65R190CFD7AAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

Automotive, AEC-Q101, CoolMOS™

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

28 nC @ 10 V

Product Status :

Active

Power Dissipation :

77W

Current - Continuous Drain (Id) @ 25°C :

14A (Tc)

Base Product Number :

IPP65R190

Technology :

MOSFET (Metal Oxide)

Operating Temperature :

-40°C ~ 150°C (TJ)

Package :

Tube

Qualification :

AEC-Q101

Input Capacitance (Ciss) (Max) @ Vds :

1291 pF @ 400 V

Vgs (Max) :

±20V

Power Dissipation (Max) :

77W (Tc)

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

650 V

Supplier Device Package :

PG-TO220-3

Vgs(th) (Max) @ Id :

4.5V @ 320µA

Continuous Drain Current Id :

14A

Package / Case :

TO-220-3

Channel Type :

N Channel

Rds On (Max) @ Id, Vgs :

190mOhm @ 6.4A, 10V