IPP65R190C7FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

190 mΩ

Min Operating Temperature :

-55°C

Packaging :

Tube

Max Dual Supply Voltage :

650V

Drain to Source Resistance :

168MOhm

Continuous Drain Current (ID) :

13A

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Factory Lead Time :

18 Weeks

Fall Time (Typ) :

9 ns

Mount :

Through Hole

Turn-Off Delay Time :

54 ns

Input Capacitance :

1.15nF

Series :

CoolMOS™ C7

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

190mOhm @ 5.7A, 10V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 400V

Supplier Device Package :

PG-TO220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Turn On Delay Time :

11 ns

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Vgs (Max) :

±20V

Package / Case :

TO-220-3

Drain to Source Voltage (Vdss) :

650V

FET Type :

N-Channel

Published :

2004

Power Dissipation-Max :

72W Tc

Number of Pins :

3

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 290μA