IPP65R150CFDAAKSA1
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- Mfr.Part #
- IPP65R150CFDAAKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 22.4A TO220-3
- Stock
- 63
- In Stock ：
- 63
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Halogen Free :
- Halogen Free
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Reach Compliance Code :
- not_compliant
- Series :
- Automotive, AEC-Q101, CoolMOS™
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 18 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 22.4A Tc
- Power Dissipation-Max :
- 195.3W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Packaging :
- Tube
- Fall Time (Typ) :
- 5.6 ns
- Operating Temperature :
- -40°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.15Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2340pF @ 100V
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 72A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Contains Lead
- Number of Elements :
- 1
- Number of Pins :
- 3
- Avalanche Energy Rating (Eas) :
- 614 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 900μA
- JEDEC-95 Code :
- TO-220AB
- Max Dual Supply Voltage :
- 650V
- JESD-609 Code :
- e3
- Rise Time :
- 7.6ns
- Continuous Drain Current (ID) :
- 22.4A
- Mount :
- Through Hole
- Pin Count :
- 3
- Package / Case :
- TO-220-3
- Published :
- 2008
- Turn On Delay Time :
- 12.4 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Additional Feature :
- High Reliability
- Pbfree Code :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 9.3A, 10V
- Turn-Off Delay Time :
- 52.8 ns
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IPP65R150CFDAAKSA1
N-Channel Tube 150m Ω @ 9.3A, 10V ±20V 2340pF @ 100V 86nC @ 10V TO-220-3
IPP65R150CFDAAKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 614 mJ.A device's maximum input capacitance is 2340pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 22.4A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 52.8 ns.Its maximum pulsed drain current is 72A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12.4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 650V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
IPP65R150CFDAAKSA1 Features
the avalanche energy rating (Eas) is 614 mJ
a continuous drain current (ID) of 22.4A
the turn-off delay time is 52.8 ns
based on its rated peak drain current 72A.
IPP65R150CFDAAKSA1 Applications
There are a lot of Infineon Technologies
IPP65R150CFDAAKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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