IPP65R115CFD7AAKSA1

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Mfr.Part #
IPP65R115CFD7AAKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 650V 21A TO220-3
Stock
1
In Stock :
1

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
1950 pF @ 400 V
Vgs(th) (Max) @ Id :
4.5V @ 490μA
Transistor Polarity :
N-Channel
Maximum Operating Temperature :
+ 150 C
Subcategory :
MOSFETs
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Continuous Drain Current Id :
21
Mounting Style :
Through Hole
Tradename :
CoolMOS
Rds On (Max) @ Id, Vgs :
115mOhm @ 9.7A, 10V
Minimum Operating Temperature :
- 40 C
Product Type :
MOSFET
Qualification :
AEC-Q101
Operating Temperature :
-40°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Package :
Tube
Manufacturer :
Infineon
Gate Charge (Qg) (Max) @ Vgs :
41 nC @ 10 V
Power Dissipation :
114
Product Status :
Active
Product Category :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
21A (Tc)
Series :
Automotive, AEC-Q101, CoolMOS? CFD7
Channel Mode :
Enhancement
Brand :
Infineon Technologies
FET Type :
N-Channel
Package / Case :
TO-220-3
Supplier Device Package :
PG-TO220-3
Power Dissipation (Max) :
114W (Tc)
Base Product Number :
IPP65R115
Drain to Source Voltage (Vdss) :
650 V
RoHS :
Details
Number of Channels :
1 Channel
FET Feature :
-
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPP65R115CFD7AAKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-40°C ~ 150°C (TJ), Package / Case:TO-220-3, Number of Channels:1 Channel, IPP65R115CFD7AAKSA1 pinout, IPP65R115CFD7AAKSA1 datasheet PDF, IPP65R115CFD7AAKSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPP65R115CFD7AAKSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPP65R115CFD7AAKSA1


N-Channel Tube 115mOhm @ 9.7A, 10V ±20V 1950 pF @ 400 V 41 nC @ 10 V 650 V TO-220-3

IPP65R115CFD7AAKSA1 Overview


A device's maximum input capacitance is 1950 pF @ 400 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 650 V drain to source voltage (Vdss).

IPP65R115CFD7AAKSA1 Features


a 650 V drain to source voltage (Vdss)


IPP65R115CFD7AAKSA1 Applications


There are a lot of Infineon Technologies
IPP65R115CFD7AAKSA1 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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