IPP65R110CFDAAKSA1
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- Mfr.Part #
- IPP65R110CFDAAKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 31.2A TO220-3
- Stock
- 5,830
- In Stock ：
- 5,830
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.11Ohm
- Number of Elements :
- 1
- Pin Count :
- 3
- Package / Case :
- TO-220-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Halogen Free :
- Halogen Free
- Turn On Delay Time :
- 16 ns
- Pbfree Code :
- No
- Reach Compliance Code :
- not_compliant
- JEDEC-95 Code :
- TO-220AB
- Lead Free :
- Contains Lead
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2008
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 3240pF @ 100V
- Continuous Drain Current (ID) :
- 31.2A
- Operating Temperature :
- -40°C~150°C TJ
- Fall Time (Typ) :
- 6 ns
- Power Dissipation-Max :
- 277.8W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Series :
- Automotive, AEC-Q101, CoolMOS™
- Max Dual Supply Voltage :
- 650V
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 845 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 99.6A
- Factory Lead Time :
- 18 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 31.2A Tc
- Vgs(th) (Max) @ Id :
- 4.5V @ 1.3mA
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 12.7A, 10V
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 68 ns
- Rise Time :
- 11ns
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Additional Feature :
- High Reliability
- Gate Charge (Qg) (Max) @ Vgs :
- 118nC @ 10V
- Datasheets
- IPP65R110CFDAAKSA1
N-Channel Tube 110m Ω @ 12.7A, 10V ±20V 3240pF @ 100V 118nC @ 10V TO-220-3
IPP65R110CFDAAKSA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 845 mJ.A device's maximal input capacitance is 3240pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 31.2A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 68 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 99.6A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 650V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).
IPP65R110CFDAAKSA1 Features
the avalanche energy rating (Eas) is 845 mJ
a continuous drain current (ID) of 31.2A
the turn-off delay time is 68 ns
based on its rated peak drain current 99.6A.
IPP65R110CFDAAKSA1 Applications
There are a lot of Infineon Technologies
IPP65R110CFDAAKSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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