IPP65R099C6XKSA1
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- Mfr.Part #
- IPP65R099C6XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 38A TO220-3
- Stock
- 3,791
- In Stock ：
- 3,791
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2780pF @ 100V
- FET Type :
- N-Channel
- Package / Case :
- TO-220-3
- Rds On (Max) @ Id, Vgs :
- 99m Ω @ 12.8A, 10V
- Drain-source On Resistance-Max :
- 0.099Ohm
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Series :
- CoolMOS™
- Terminal Position :
- Single
- Halogen Free :
- Halogen Free
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 845 mJ
- Power Dissipation-Max :
- 278W Tc
- Lead Free :
- Lead Free
- Max Dual Supply Voltage :
- 650V
- RoHS Status :
- RoHS Compliant
- Turn-Off Delay Time :
- 77 ns
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 38A
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Turn On Delay Time :
- 10.6 ns
- Fall Time (Typ) :
- 6 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Factory Lead Time :
- 12 Weeks
- Terminal Finish :
- Tin (Sn)
- Pulsed Drain Current-Max (IDM) :
- 115A
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- JESD-609 Code :
- e3
- Published :
- 2008
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 3.5V @ 1.2mA
- Mounting Type :
- Through Hole
- Rise Time :
- 9ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IPP65R099C6XKSA1
N-Channel Tube 99m Ω @ 12.8A, 10V ±20V 2780pF @ 100V 15nC @ 10V TO-220-3
IPP65R099C6XKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 845 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2780pF @ 100V.This device conducts a continuous drain current (ID) of 38A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 77 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 115A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10.6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 650V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPP65R099C6XKSA1 Features
the avalanche energy rating (Eas) is 845 mJ
a continuous drain current (ID) of 38A
the turn-off delay time is 77 ns
based on its rated peak drain current 115A.
IPP65R099C6XKSA1 Applications
There are a lot of Infineon Technologies
IPP65R099C6XKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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