IPP65R045C7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2008

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

249 mJ

Mount :

Through Hole

Turn On Delay Time :

20 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Packaging :

Tube

Rise Time :

14ns

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.045Ohm

Power Dissipation-Max :

227W Tc

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

4340pF @ 400V

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

45m Ω @ 24.9A, 10V

Transistor Application :

SWITCHING

Max Dual Supply Voltage :

650V

Current - Continuous Drain (Id) @ 25°C :

46A Tc

Fall Time (Typ) :

7 ns

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

46A

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Power Dissipation :

227W

Number of Pins :

3

Factory Lead Time :

18 Weeks

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 1.25mA

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Halogen Free :

Halogen Free

Turn-Off Delay Time :

82 ns

Number of Terminations :

3

Number of Elements :

1

Series :

CoolMOS™ C7