IPP65R041CFD7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Brand :

Infineon Technologies

Number of Channels :

1 Channel

FET Type :

N-Channel

Product Type :

MOSFET

Package :

Tube

Packaging :

Tube

Drive Voltage (Max Rds On, Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

102 nC @ 10 V

Channel Mode :

Enhancement

Qualification :

-

Rds On (Max) @ Id, Vgs :

41mOhm @ 24.8A, 10V

Supplier Device Package :

PG-TO220-3-1

Manufacturer :

Infineon

RoHS :

Details

Drain to Source Voltage (Vdss) :

650 V

Power Dissipation :

227W

Channel Type :

N Channel

Mounting Style :

Through Hole

Base Product Number :

IPP65R041

Series :

CoolMOS? CFD7

Current - Continuous Drain (Id) @ 25°C :

50A (Tc)

Subcategory :

MOSFETs

Package / Case :

TO-220-3

Maximum Operating Temperature :

+ 150 C

Input Capacitance (Ciss) (Max) @ Vds :

4975 pF @ 400 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 1.24mA

Product Category :

MOSFET

Continuous Drain Current Id :

50A

Vgs (Max) :

±20V

Product Status :

Active

Mounting Type :

Through Hole

Power Dissipation (Max) :

227W (Tc)

Minimum Operating Temperature :

- 55 C

FET Feature :

-