IPP60R950C6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Published :

2008

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.95Ohm

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

600V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

46 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

CoolMOS™

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Packaging :

Tube

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3.5V @ 130μA

Surface Mount :

No

Power Dissipation-Max :

37W Tc

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

4.4A

JESD-609 Code :

e3

Number of Terminations :

3

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Compliant

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

12A

Rds On (Max) @ Id, Vgs :

950m Ω @ 1.5A, 10V

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V