IPP60R750E6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

15.7A

DS Breakdown Voltage-Min :

600V

Input Capacitance (Ciss) (Max) @ Vds :

373pF @ 100V

Vgs(th) (Max) @ Id :

3.5V @ 170μA

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

72 mJ

Surface Mount :

No

Published :

2008

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

5.7A Tc

Qualification Status :

Not Qualified

Factory Lead Time :

12 Weeks

Series :

CoolMOS™

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Packaging :

Tube

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

750m Ω @ 2A, 10V

Power Dissipation-Max :

48W Tc

Gate Charge (Qg) (Max) @ Vgs :

17.2nC @ 10V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.75Ohm

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V