IPP60R600P6
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- Mfr.Part #
- IPP60R600P6
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 6
- Stock
- 37,957
- In Stock ：
- 37,957
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 600 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- RoHS Compliant
- Factory Lead Time :
- 12 Weeks
- Vgs(th) (Max) @ Id :
- 4.5V @ 200μA
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 600V
- Power Dissipation-Max :
- 63W Tc
- Series :
- CoolMOS™ P6
- Min Operating Temperature :
- -55°C
- Rds On (Max) @ Id, Vgs :
- 600mOhm @ 2.4A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Max Operating Temperature :
- 150°C
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-220-3
- Fall Time (Typ) :
- 14 ns
- Supplier Device Package :
- PG-TO220-3
- Max Dual Supply Voltage :
- 600V
- Continuous Drain Current (ID) :
- 7.3A
- Turn On Delay Time :
- 11 ns
- Turn-Off Delay Time :
- 33 ns
- Halogen Free :
- Halogen Free
- Published :
- 2013
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 7.3A Tc
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 557pF @ 100V
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Drain to Source Resistance :
- 540mOhm
- Input Capacitance :
- 557pF
- Rise Time :
- 7ns
- Datasheets
- IPP60R600P6
N-Channel Tube 600mOhm @ 2.4A, 10V ±20V 557pF @ 100V 12nC @ 10V 600V TO-220-3
IPP60R600P6XKSA1 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 557pF @ 100V.This device has a continuous drain current (ID) of [7.3A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.MOSFETs have 540mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 600V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IPP60R600P6XKSA1 Features
a continuous drain current (ID) of 7.3A
the turn-off delay time is 33 ns
single MOSFETs transistor is 540mOhm
a 600V drain to source voltage (Vdss)
IPP60R600P6XKSA1 Applications
There are a lot of Infineon Technologies
IPP60R600P6XKSA1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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