IPP60R520E6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2011

ECCN Code :

EAR99

Halogen Free :

Halogen Free

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

650V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

15.95mm

Current - Continuous Drain (Id) @ 25°C :

8.1A Tc

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.5V @ 230μA

Pulsed Drain Current-Max (IDM) :

22A

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Number of Elements :

1

Turn On Delay Time :

12 ns

Package / Case :

TO-220-3

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

600V

Power Dissipation-Max :

66W Tc

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.52Ohm

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

512pF @ 100V

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Width :

4.57mm

Pin Count :

3

FET Type :

N-Channel

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

520m Ω @ 2.8A, 10V

Number of Terminations :

3

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

23.4nC @ 10V

Continuous Drain Current (ID) :

8.1A

Rise Time :

10ns

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

9 ns

Factory Lead Time :

12 Weeks

Number of Pins :

3

Power Dissipation :

66W

Packaging :

Tube

Radiation Hardening :

No

Turn-Off Delay Time :

75 ns

Length :

10.36mm

Terminal Finish :

Tin (Sn)

Series :

CoolMOS™