IPP60R520CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

6.8 A

Turn-On Delay Time :

17 ns

Package / Case :

TO-220-3

Rds On Max :

520 mΩ

FET Feature :

-

Current - Continuous Drain (Id) @ 25°C :

6.8A (Tc)

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Rise Time :

12 ns

Drain to Source Resistance :

520 mΩ

Drain to Source Voltage (Vdss) :

600 V

Number of Pins :

3

Power Dissipation (Max) :

66W (Tc)

Continuous Drain Current Id :

6.8

Termination :

Through Hole

Channel Type :

N

Power Dissipation :

66 W

Rds On (Max) @ Id, Vgs :

520mOhm @ 3.8A, 10V

Halogen Free :

Halogen Free

FET Type :

N-Channel

Nominal Vgs :

3 V

Input Capacitance :

630 pF

Operating Temperature :

-55°C ~ 150°C (TJ)

Threshold Voltage :

3 V

RoHS :

Compliant

Technology :

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20 V

Package :

Bulk

Vgs (Max) :

±20V

Turn-Off Delay Time :

74 ns

Mounting Type :

Through Hole

Max Operating Temperature :

150 °C

Element Configuration :

Single

Min Operating Temperature :

-55 °C

Supplier Device Package :

PG-TO220-3-1

Gate Charge (Qg) (Max) @ Vgs :

31 nC @ 10 V

Series :

CoolMOS™

Drain to Source Breakdown Voltage :

600 V

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

630 pF @ 100 V

Max Power Dissipation :

66 W

REACH SVHC :

No SVHC

Dual Supply Voltage :

650 V