IPP60R520C6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Number of Elements :

1

Turn-Off Delay Time :

85 ns

Power Dissipation :

66W

Max Dual Supply Voltage :

600V

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Published :

2011

Fall Time (Typ) :

14 ns

Mounting Type :

Through Hole

Terminal Position :

Single

Series :

CoolMOS™

Rise Time :

10ns

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

512pF @ 100V

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

8.1A

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

8.1A Tc

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

22A

Vgs(th) (Max) @ Id :

3.5V @ 230μA

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

520m Ω @ 2.8A, 10V

Gate Charge (Qg) (Max) @ Vgs :

23.4nC @ 10V

Pbfree Code :

yes

Qualification Status :

Not Qualified

Pin Count :

3

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.52Ohm

Number of Terminations :

3

Power Dissipation-Max :

66W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Delay Time :

13 ns

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Halogen Free :

Halogen Free

JESD-609 Code :

e3