IPP60R520C6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

22A

Packaging :

Tube

Max Dual Supply Voltage :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

66W Tc

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.52Ohm

Input Capacitance (Ciss) (Max) @ Vds :

512pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

8.1A Tc

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

3.5V @ 230μA

JESD-609 Code :

e3

Terminal Position :

Single

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

23.4nC @ 10V

Fall Time (Typ) :

14 ns

Rise Time :

10ns

Lead Free :

Lead Free

Series :

CoolMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Published :

2011

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Power Dissipation :

66W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

13 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

8.1A

Number of Elements :

1

Halogen Free :

Halogen Free

Rds On (Max) @ Id, Vgs :

520m Ω @ 2.8A, 10V

Pbfree Code :

yes

FET Type :

N-Channel

Turn-Off Delay Time :

85 ns