IPP60R450E6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

185 mJ

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

9.2A Tc

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

26A

Surface Mount :

No

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

450m Ω @ 3.4A, 10V

DS Breakdown Voltage-Min :

600V

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

CoolMOS™

Drain to Source Voltage (Vdss) :

600V

Reach Compliance Code :

Compliant

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 100V

Drain-source On Resistance-Max :

0.45Ohm

Number of Elements :

1

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Published :

2008

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

FET Type :

N-Channel

Packaging :

Tube

Package / Case :

TO-220-3

Power Dissipation-Max :

74W Tc

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.5V @ 280μA

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single