IPP60R385CPXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 340µA

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.385Ohm

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

27A

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Published :

2007

Series :

CoolMOS™

Terminal Position :

Single

FET Type :

N-Channel

Power Dissipation-Max :

83W Tc

Transistor Application :

SWITCHING

Surface Mount :

No

Packaging :

Tube

Avalanche Energy Rating (Eas) :

227 mJ

Factory Lead Time :

16 Weeks

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

9A

Rds On (Max) @ Id, Vgs :

385m Ω @ 5.2A, 10V

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 100V

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

600V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

650V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V