IPP60R380C6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Pin Count :

3

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 100V

Drain Current-Max (Abs) (ID) :

10.6A

Series :

CoolMOS™

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

380m Ω @ 3.8A, 10V

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

210 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Number of Terminations :

3

DS Breakdown Voltage-Min :

600V

Drain-source On Resistance-Max :

0.38Ohm

Vgs (Max) :

±20V

Published :

2008

Pulsed Drain Current-Max (IDM) :

30A

FET Type :

N-Channel

Mounting Type :

Through Hole

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

83W Tc

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

10.6A Tc

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Additional Feature :

High Voltage

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

3.5V @ 320µA