IPP60R330P6XKSA1
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- Mfr.Part #
- IPP60R330P6XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 12A TO220-3
- Stock
- 11,170
- In Stock ：
- 11,170
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 330mOhm @ 4.5A, 10V
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 33 ns
- Rise Time :
- 7ns
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Rds On Max :
- 330 mΩ
- Packaging :
- Tube
- Max Dual Supply Voltage :
- 600V
- Drain to Source Voltage (Vdss) :
- 600V
- Halogen Free :
- Halogen Free
- Package / Case :
- TO-220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Max Operating Temperature :
- 150°C
- Number of Pins :
- 3
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1010pF @ 100V
- Mounting Type :
- Through Hole
- Input Capacitance :
- 1.01nF
- Published :
- 2008
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 12 Weeks
- Min Operating Temperature :
- -55°C
- Drain to Source Resistance :
- 297mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- PG-TO220-3
- Continuous Drain Current (ID) :
- 12A
- Power Dissipation-Max :
- 93W Tc
- Lead Free :
- Lead Free
- Series :
- CoolMOS™ P6
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 370μA
- Turn On Delay Time :
- 12 ns
- Datasheets
- IPP60R330P6XKSA1
N-Channel Tube 330mOhm @ 4.5A, 10V ±20V 1010pF @ 100V 22nC @ 10V 600V TO-220-3
IPP60R330P6XKSA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1010pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 33 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 297mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 600V, it supports the maximal dual supply voltage.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IPP60R330P6XKSA1 Features
a continuous drain current (ID) of 12A
the turn-off delay time is 33 ns
single MOSFETs transistor is 297mOhm
a 600V drain to source voltage (Vdss)
IPP60R330P6XKSA1 Applications
There are a lot of Infineon Technologies
IPP60R330P6XKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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