IPP60R330P6XKSA1
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- Mfr.Part #
- IPP60R330P6XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IPP60R330 - 600V COOLMOS N-CHANN
- Stock
- 35,718
- In Stock ：
- 35,718
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Package / Case :
- TO-220-3
- Drain to Source Voltage (Vdss) :
- 600V
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 12A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1010pF @ 100V
- Published :
- 2008
- Max Dual Supply Voltage :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Mounting Type :
- Through Hole
- Drain to Source Resistance :
- 297mOhm
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 7ns
- Power Dissipation-Max :
- 93W Tc
- Series :
- CoolMOS™ P6
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Max Operating Temperature :
- 150°C
- Input Capacitance :
- 1.01nF
- RoHS Status :
- RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 33 ns
- Factory Lead Time :
- 12 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Rds On Max :
- 330 mΩ
- Rds On (Max) @ Id, Vgs :
- 330mOhm @ 4.5A, 10V
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4.5V @ 370μA
- Halogen Free :
- Halogen Free
- Turn On Delay Time :
- 12 ns
- Min Operating Temperature :
- -55°C
- Lead Free :
- Lead Free
- Supplier Device Package :
- PG-TO220-3
- Datasheets
- IPP60R330P6XKSA1
N-Channel Tube 330mOhm @ 4.5A, 10V ±20V 1010pF @ 100V 22nC @ 10V 600V TO-220-3
IPP60R330P6XKSA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1010pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 33 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 297mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 600V, it supports the maximal dual supply voltage.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IPP60R330P6XKSA1 Features
a continuous drain current (ID) of 12A
the turn-off delay time is 33 ns
single MOSFETs transistor is 297mOhm
a 600V drain to source voltage (Vdss)
IPP60R330P6XKSA1 Applications
There are a lot of Infineon Technologies
IPP60R330P6XKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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