IPP60R280P7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 190μA

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

Drain-source On Resistance-Max :

0.28Ohm

Current - Continuous Drain (Id) @ 25°C :

12A Tc

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

53W Tc

Surface Mount :

No

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

600V

Terminal Position :

Single

Factory Lead Time :

18 Weeks

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Published :

2014

Operating Mode :

ENHANCEMENT MODE

Series :

CoolMOS™ P7

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

280m Ω @ 3.8A, 10V

Pulsed Drain Current-Max (IDM) :

36A

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

38 mJ

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

761pF @ 400V