IPP60R280P6
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- Mfr.Part #
- IPP60R280P6
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR
- Stock
- 29,980
- In Stock ：
- 29,980
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 3.5V @ 430μA
- Package / Case :
- TO-220-3
- Max Operating Temperature :
- 150°C
- Turn-Off Delay Time :
- 36 ns
- Rds On Max :
- 280 mΩ
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Resistance :
- 252mOhm
- Input Capacitance :
- 950pF
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Series :
- CoolMOS™
- Weight :
- 6.000006g
- Drain to Source Voltage (Vdss) :
- 600V
- Power Dissipation :
- 104W
- Mount :
- Through Hole
- Turn On Delay Time :
- 12 ns
- Rds On (Max) @ Id, Vgs :
- 280mOhm @ 6.5A, 10V
- Min Operating Temperature :
- -55°C
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 104W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Continuous Drain Current (ID) :
- 13.8A
- Mounting Type :
- Through Hole
- Supplier Device Package :
- PG-TO220-3
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 6ns
- Published :
- 2008
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 950pF @ 100V
- Halogen Free :
- Halogen Free
- Max Dual Supply Voltage :
- 600V
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 600V
- Factory Lead Time :
- 18 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 13.8A Tc
- Datasheets
- IPP60R280P6
N-Channel Tube 280mOhm @ 6.5A, 10V ±20V 950pF @ 100V 43nC @ 10V 600V TO-220-3
IPP60R280P6XKSA1 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 950pF @ 100V.This device has a continuous drain current (ID) of [13.8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 36 ns.MOSFETs have 252mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 600V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IPP60R280P6XKSA1 Features
a continuous drain current (ID) of 13.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 36 ns
single MOSFETs transistor is 252mOhm
a 600V drain to source voltage (Vdss)
IPP60R280P6XKSA1 Applications
There are a lot of Infineon Technologies
IPP60R280P6XKSA1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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