IPP60R280P6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Turn-Off Delay Time :

36 ns

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 100V

Continuous Drain Current (ID) :

13.8A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

CoolMOS™

Supplier Device Package :

PG-TO220-3

Rds On (Max) @ Id, Vgs :

280mOhm @ 6.5A, 10V

Vgs (Max) :

±20V

Rds On Max :

280 mΩ

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

600V

Factory Lead Time :

18 Weeks

Drain to Source Resistance :

252mOhm

Power Dissipation :

104W

Published :

2008

Max Operating Temperature :

150°C

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

600V

Packaging :

Tube

Rise Time :

6ns

Min Operating Temperature :

-55°C

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

600V

Number of Channels :

1

Weight :

6.000006g

Turn On Delay Time :

12 ns

Vgs(th) (Max) @ Id :

3.5V @ 430μA

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

13.8A Tc

Halogen Free :

Halogen Free

Input Capacitance :

950pF

Number of Elements :

1

Power Dissipation-Max :

104W Tc

Mounting Type :

Through Hole