IPP60R280E6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 430μA

Rds On (Max) @ Id, Vgs :

280m Ω @ 6.5A, 10V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

600V

Current - Continuous Drain (Id) @ 25°C :

13.8A Tc

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Terminal Finish :

Tin (Sn)

Factory Lead Time :

12 Weeks

Packaging :

Tube

Number of Terminations :

3

Terminal Position :

Single

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

40A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.28Ohm

Series :

CoolMOS™

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

284 mJ

Power Dissipation-Max :

104W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 100V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2008

Peak Reflow Temperature (Cel) :

NOT SPECIFIED