IPP60R280C6XKSA1
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- Mfr.Part #
- IPP60R280C6XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IPP60R280 - 600V COOLMOS N-CHANN
- Stock
- 46,303
- In Stock ：
- 46,303
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 12 ns
- Published :
- 2008
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 13 ns
- Rise Time :
- 11ns
- Avalanche Energy Rating (Eas) :
- 284 mJ
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 3.5V @ 430μA
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 104W Tc
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Terminal Position :
- Single
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- CoolMOS™
- Factory Lead Time :
- 12 Weeks
- Max Dual Supply Voltage :
- 600V
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 13.8A Tc
- Drain-source On Resistance-Max :
- 0.28Ohm
- JEDEC-95 Code :
- TO-220AB
- Continuous Drain Current (ID) :
- 13.8A
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Pulsed Drain Current-Max (IDM) :
- 40A
- ECCN Code :
- EAR99
- Packaging :
- Tube
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 950pF @ 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3
- Power Dissipation :
- 104W
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 100 ns
- Halogen Free :
- Halogen Free
- Rds On (Max) @ Id, Vgs :
- 280m Ω @ 6.5A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Datasheets
- IPP60R280C6XKSA1
N-Channel Tube 280m Ω @ 6.5A, 10V ±20V 950pF @ 100V 43nC @ 10V TO-220-3
IPP60R280C6XKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 284 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 950pF @ 100V.This device conducts a continuous drain current (ID) of 13.8A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 100 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 40A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 600V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPP60R280C6XKSA1 Features
the avalanche energy rating (Eas) is 284 mJ
a continuous drain current (ID) of 13.8A
the turn-off delay time is 100 ns
based on its rated peak drain current 40A.
IPP60R280C6XKSA1 Applications
There are a lot of Infineon Technologies
IPP60R280C6XKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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