IPP60R250CPXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Turn On Delay Time :

40 ns

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Power Dissipation :

104W

Terminal Position :

Single

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

250m Ω @ 7.8A, 10V

Number of Terminations :

3

Power Dissipation-Max :

104W Tc

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Transistor Element Material :

SILICON

Series :

CoolMOS™

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Continuous Drain Current (ID) :

12A

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Published :

2008

JEDEC-95 Code :

TO-220AB

Max Dual Supply Voltage :

600V

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Lead Free :

Lead Free

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.25Ohm

Vgs (Max) :

±20V

Pin Count :

3

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

650V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

16 Weeks

Halogen Free :

Halogen Free

Vgs(th) (Max) @ Id :

3.5V @ 440µA

Qualification Status :

Not Qualified

Turn-Off Delay Time :

110 ns

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 100V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

40A

Fall Time (Typ) :

12 ns

Rise Time :

17ns

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V